AO4821 12v dual p-channel mosfet v ds i d (at v gs =-4.5v) -9a r ds(on) (at v gs =-4.5v) < 19m w r ds(on) (at v gs =-2.5v) < 24m w r ds(on) (at v gs =-1.8v) < 30m w symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl w 2 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 32 90 40 maximum junction-to-ambient a t a =25c t a =70c power dissipation b p d pulsed drain current c continuous drain current t a =25c a i d -9 -7 -60 the AO4821 uses advanced trench technology to provi de excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable fo r use as a load switch. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -12v v 8 gate-source voltage drain-source voltage -12 c/w r q ja 48 74 62.5 c thermal characteristics units parameter typ max 1.28 t a =70c junction and storage temperature range -55 to 150 g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 8 6 7 top view soic-8 g1 d1 1 s1 rg g2 d2 s2 rg www.freescale.net.cn 1/5 general description features
symbol min typ max units bv dss -12 v v ds =-12v, v gs =0v -1 t j =55c -5 i gss 10 m a v gs(th) gate threshold voltage -0.35 -0.53 -0.85 v i d(on) -60 a 16 19 t j =125c 22 27 19 24 m w 23 30 m w g fs 45 s v sd -0.56 -1 v i s -3 a c iss 1390 1740 2100 pf c oss 230 334 435 pf c rss 120 200 280 pf r g 0.9 1.3 1.7 k w q g (4.5v) 15 19 23 nc q gs 3.6 4.5 5.4 nc q gd 3 5.3 7.4 nc t d(on) 240 ns t r 580 ns t d(off) 7 m s t f 4.2 m s t rr 18 22 26 ns q rr 14 17 20 nc body diode reverse recovery time drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-4.5v, v ds =-5v v gs =-4.5v, i d =-9a reverse transfer capacitance i f =-9a, di/dt=500a/ m s v gs =0v, v ds =-6v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a v ds =v gs i d =-250 m a v ds =0v, v gs = 8v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m w i s =-1a,v gs =0v v ds =-5v, i d =-9a v gs =-1.8v, i d =-6a v gs =-2.5v, i d =-8a gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =-4.5v, v ds =-6v, i d =-9a gate source charge gate drain charge body diode reverse recovery charge i f =-9a, di/dt=500a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =-4.5v, v ds =-6v, r l =0.67 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150c. the soa curve provides a single pulse ratin g. www.freescale.net.cn 2/5 AO4821 12v dual p-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0 10 20 30 40 50 60 0 0.5 1 1.5 2 2.5 3 -v gs (volts) figure 2: transfer characteristics (note e) -i d (a) 10 15 20 25 30 0 5 10 15 20 -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w w w w ) v gs =-2.5v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics (note e) -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance i d =-9a, v gs =-4.5v i d =-8a, v gs =-2.5v 10 15 20 25 30 35 40 45 0 2 4 6 8 -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w w w w ) 25c 125c v ds =-5v v gs =-1.8v v gs =-4.5v i d =-9a 25c 125c 0 10 20 30 40 50 60 0 1 2 3 4 5 -v ds (volts) fig 1: on-region characteristics (note e) -i d (a) v gs =-1.5v -3v -4.5v -2v -2.5v i d =-6a, v gs =-1.8v www.freescale.net.cn 3/5 AO4821 12v dual p-channel mosfet
typical electrical and thermal characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 10 15 20 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 400 800 1200 1600 2000 2400 2800 0 2 4 6 8 10 12 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =-6v i d =-9a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) t a =25c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 m 10ms 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q q q q ja normalized transient thermal resistance t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =90c/w www.freescale.net.cn 4/5 AO4821 12v dual p-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig v gs - + vd c d u t l v gs v ds isd isd d iode r ecovery t est c ircuit & w aveform s v ds - v ds + i f di/dt i r m rr v dd v dd q = - idt t rr - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff www.freescale.net.cn 5/5 AO4821 12v dual p-channel mosfet
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